Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories

被引：13

作者：

Yang, B

Suh, CW

Lee, CG

Kang, EY

Kang, YM

Lee, SS

Hong, SK

Kang, NS

Yang, JM

机构：

[1] Hyundai Elect Ind Co Ltd, Memory Res & Dev Div, FeRAM Technol, Yeoju Kun 469880, Kyoungki Do, South Korea

[2] Hyundai Elect Ind Co Ltd, Anal Lab 1, Yeoju Kun 469880, Kyoungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1289913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a hydrogen barrier necessary for a conventional passivation process of integrated SrBi2Ta2O9 (SBT)-based memories. The passivation process significantly degraded electrical properties of the memories, resulting from hydrogen damage in the SBT capacitors. Metallic films (Ti, TiN, and Al) were investigated as a hydrogen barrier during the passivation process. The Ti(> 500 Angstrom) hydrogen barrier only showed the electrical properties of memories free from hydrogen damage. The formation of stable hydrides and the suppressed diffusion of hydrogen through the Ti films during the passivation processes resulted in sufficient switching polarization, low leakage current, and good reliabilities at high temperature. (C) 2000 American Institute of Physics. [S0003- 6951(00)01235-3].

引用

页码：1372 / 1374

页数：3

共 20 条

[1] Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors [J].