Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles

被引：16

作者：

Choi, C ^{[1
]}

Kang, CS ^{[1
]}

Kang, CY ^{[1
]}

Rhee, SJ ^{[1
]}

Akbar, MS ^{[1
]}

Krishnan, SA ^{[1
]}

Zhang, MH ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 01期

关键词：

charge pumping current; charge trapping char acteristics; nitrogen incorporated hafnium oxide; positive bias temperature instability (PBTI);

D O I：

10.1109/LED.2004.840717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Positive bias temperature instability (PBTI) effects of HfO2-based nMOSFETs with various nitrogen profiles in HfO2 were investigated. The nitrogen profile was modulated by an inserting Si layer (similar to6Angstrom) into hafnium oxynitride gate dielectrics. The Si layer is used to trap nitrogen and to suppress nitrogen out-diffusion during subsequent anneals. Compared to control HfOxNy without Si insertion, the Si-inserted HfOxNy samples exhibited reduced PBTI degradation, especially if the Si layer was placed further from the Si interface. The improvement can be attributed to the reduction of oxide bulk trapped as well as reduced interface trapped charge generation resulting from compensation effect of inserted Si layer.

引用

页码：32 / 34

页数：3

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