Stability of defects created by high fluence helium implantation in silicon

被引：12

作者：

David, ML ^{[1
]}

Beaufort, MF ^{[1
]}

Barbot, JF ^{[1
]}

机构：

[1] Univ Poitiers, Met Phys Lab, UMR 6630, F-86962 Chasseneuil, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 226卷 / 04期

关键词：

defects; ion implantation; helium; silicon; TEM;

D O I：

10.1016/j.nimb.2004.07.009

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Stability of extended defects created by high fluence helium implantation (50 keV, 5 x 10(16) cm(-2)) from room temperature to 800 degreesC has been studied using transmission electron microscopy. Our results clearly show that the cavities behave as good sinks for interstitial type defects generated during ion implantation, leading in some cases to the cavity dissolution. A three-dimensional "phase diagram" related to the formation and evolution of interstitial-type defects is also proposed. It is plotted in terms of quantity of damage, annealing time and implantation temperature. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：531 / 536

页数：6

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