Oxygen effect on the interfacial electronic structure of C60 film studied by ultraviolet photoelectron spectroscopy

被引：41

作者：

Tanaka, Yusuke

Kanai, Kanarne

Ouchi, Yukio

Seki, Kazuhiko

机构：

[1] Nagoya Univ, Grad Sch Sci, Dept Chem, Chikusa Ku, Nagoya, Aichi 4648602, Japan

[2] Nagoya Univ, Res Ctr Mat Sci, Chikusa Ku, Nagoya, Aichi 4648602, Japan

[3] Nagoya Univ, Inst Adv Res, Chikusa Ku, Nagoya, Aichi 4648602, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2007年 / 441卷 / 1-3期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/j.cplett.2007.04.080

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Oxygen effect on the electronic structure of the interface between C-60 and highly-oriented pyrolytic graphite was investigated by ultraviolet photoelectron spectroscopy (UPS). The film deposited in ultrahigh vacuum showed downward band bending characteristic of n-type semiconductor, possibly caused by residual impurities working as unintentional n-type dopants. In contrast, the film deposited in O-2 atmosphere (1.3 x 10(-2) Pa) did not show such band bending. Possible origins of this difference are discussed in terms of (i) deactivation of an unidentified dopant, (ii) compensation by O-2 working as an acceptor, and (iii) O-2-related carrier-traps such as O-2 itself, O2 delta-C60 delta+ and/or C60Ox (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：63 / 67

页数：5

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