Metal-insulator-metal transition in Sr2Rh1-xRuxO4(0 ≤x≤1)

被引：6

作者：

Koida, T

Wakisaka, T

Itaka, K

Koinuma, H

Matsumoto, Y

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Combinatorial Mat Explorat & Technol COMET NIMS, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1530372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural and electrical properties of c-axis oriented epitaxial Sr2Rh1-xRuxO4 (0less than or equal toxless than or equal to1) films were systematically investigated. The composition-spread films were fabricated on a temperature gradient (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) substrate to quickly optimize the growth temperature for a high-quality crystalline film having each composition (x). An anomalous c-axis length dependence on x was observed, and it was accompanied by a distinct change in electric property, that is, a metal-insulator-metal transition. (C) 2002 American Institute of Physics.

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页码：4955 / 4957

页数：3

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