Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters

被引：194

作者：

Ribordy, G ^{[1
]}

Gautier, JD ^{[1
]}

Zbinden, H ^{[1
]}

Gisin, N ^{[1
]}

机构：

[1] Univ Geneva, Appl Phys Grp, CH-1211 Geneva 4, Switzerland

来源：

APPLIED OPTICS | 1998年 / 37卷 / 12期

关键词：

D O I：

10.1364/AO.37.002272

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-mu m wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10(-4), detection efficiencies of 16% for 1.3 mu m and 7% for 1.55 mu m are obtained. Finally, a timing resolution of less than 200 ps is demonstrated. (C) 1998 Optical Society of America.

引用

页码：2272 / 2277

页数：6

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