Advances in cubic silicon carbide surfaces and self-organized one dimensional sub-nanoscale objects

We review the most recent advances into the knowledge and the understanding of cubic silicon carbide beta-SiC(100) surfaces. These investigations are based on the use of advanced experimental techniques such as photoemission spectroscopies with x-rays and synchrotron radiation sources, atom-resolved scanning tunneling microscopy, complementary low energy electron diffraction for characterisation, and state-of-the-art theoretical methods such as total energy ab-initio calculations using the local density functional approximation and scanning tunneling microscopy image simulations. Surface preparation and morphology, atomic geometry, reconstructions, phase transition and the discovery of self-organized Si atomic lines having fascinating characteristics are described for Si-terminated beta-SiC(100) surfaces. Such important issues as e.g. the role of defects or stress in surface atomic ordering will be addressed. These investigations brings deep insights into the knowledge and understanding of technologically important silicon carbide surfaces and reveal a novel aspect of SiC in its ability to be a very suitable material in nanotechnologies and micro/nano-electronics of the future.