ASIC-based event-driven 2D digital electron counter for TEM imaging

被引:19
作者
Fan, GY [1 ]
Datte, P
Beuville, E
Beche, JF
Millaud, J
Downing, KH
Burkard, FT
Ellisman, MH
Xuong, NH
机构
[1] Univ Calif San Diego, Res Dept Neurosci, Ctr Res Biol Struct, Natl Ctr Microscopy & Imaging Res, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Phys Biol Chem & Biochem, La Jolla, CA 92093 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
关键词
TEM; ASIC; electron detection; digital imaging; CCD; event-driven detector;
D O I
10.1016/S0304-3991(97)00109-5
中图分类号
TH742 [显微镜];
学科分类号
摘要
A two-dimensional application specific integrated circuit (ASIC) based detector, designed for X-ray protein crystallography, has been tested to determine its suitability as a direct electron detector for TEM imaging in the voltage range of 20-400 keV. Several markedly different properties of this device distinguish it from the charge coupled device (CCD) detectors: (1) the ASIC detector can be used directly under electron bombardment in the voltage range stated above, therefore requiring no scintillator screen; (2) each active pixel of the device is an electron counter and generates digital output independently; (3) the readout of the device is frameless and event driven; (4) the device can be operated at the room temperature and is nearly noise free; and (5) the counting dynamic range of the device is virtually unlimited. It appears that an imaging system based on this type of device would be ideal for low-dose TEM imaging and online diffraction observation and recording, as well as more conventional imaging, providing the many advantages of direct digital readout for almost all applications. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:107 / 113
页数:7
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