Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

被引：14

作者：

Shen, JL ^{[1
]}

Chang, JY

Liu, HC

Chou, WC

Chen, YF

Jung, T

Wu, MC

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 08期

关键词：

quantum wells; optical properties;

D O I：

10.1016/S0038-1098(00)00356-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in different geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensity enhancement of the cavity mode and the motional narrowing are demonstrated in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear dispersion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：431 / 435

页数：5

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