A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies

被引：13

作者：

Fay, P ^{[1
]}

Wohlmuth, W

Mahajan, A

Caneau, C

Chandrasekhar, S

Adesida, I

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] TriQuint Semicond, Hillsboro, OR 97124 USA

[3] Univ Illinois, Ctr Compound Semicond Microelect, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] Bell Commun Res Inc, Red Bank, NJ 07701 USA

[5] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 04期

关键词：

MSM photodetectors; optoelectronic integrated circuits; photoreceiver noise; photoreceivers; pin photodiodes;

D O I：

10.1109/68.662601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental comparative study of PIN/HEMT and MSM/HEMT monolithically integrated photoreceivers for high-speed long-wavelength telecommunications systems is presented. The monolithic integration of the photodetector (either MSM or PIN) with the HEMT used a stacked layer structure design grown by OMVPE. Detector areas and amplifier feedback resistances were selected to result in similar bandwidths and responsivities for both the MSM- and PIN-based photoreceivers. Sensitivities for the MSM/HEMT photoreceivers were measured to be -16.9 dBm and -10.7 dBm at 5 Gb/s and 10 Gb/s, respectively for a bit-error ratio (BER) of 10(-9) and 2(7) -1 pattern length PRBS data. Corresponding performance for the PIN/HEMT photoreceivers was -18.4 and -15.8 dBm. To the author's knowledge, this is the first direct experimental comparison of MSM-and PIN-based technologies for high-speed monolithic photoreceiver applications.

引用

页码：582 / 584

页数：3

共 6 条

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