A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies

被引:13
作者
Fay, P [1 ]
Wohlmuth, W
Mahajan, A
Caneau, C
Chandrasekhar, S
Adesida, I
机构
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[2] TriQuint Semicond, Hillsboro, OR 97124 USA
[3] Univ Illinois, Ctr Compound Semicond Microelect, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[4] Bell Commun Res Inc, Red Bank, NJ 07701 USA
[5] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA
关键词
MSM photodetectors; optoelectronic integrated circuits; photoreceiver noise; photoreceivers; pin photodiodes;
D O I
10.1109/68.662601
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An experimental comparative study of PIN/HEMT and MSM/HEMT monolithically integrated photoreceivers for high-speed long-wavelength telecommunications systems is presented. The monolithic integration of the photodetector (either MSM or PIN) with the HEMT used a stacked layer structure design grown by OMVPE. Detector areas and amplifier feedback resistances were selected to result in similar bandwidths and responsivities for both the MSM- and PIN-based photoreceivers. Sensitivities for the MSM/HEMT photoreceivers were measured to be -16.9 dBm and -10.7 dBm at 5 Gb/s and 10 Gb/s, respectively for a bit-error ratio (BER) of 10(-9) and 2(7) -1 pattern length PRBS data. Corresponding performance for the PIN/HEMT photoreceivers was -18.4 and -15.8 dBm. To the author's knowledge, this is the first direct experimental comparison of MSM-and PIN-based technologies for high-speed monolithic photoreceiver applications.
引用
收藏
页码:582 / 584
页数:3
相关论文
共 6 条
  • [1] Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application
    Bach, HG
    Umbach, A
    vanWaasen, S
    Bertenburg, RM
    Unterborsch, G
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (02) : 418 - 423
  • [2] High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers
    Fay, P
    Wohlmuth, W
    Caneau, C
    Chandrasekhar, S
    Adesida, I
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) : 991 - 993
  • [3] 18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-mu m wavelength communication systems
    Fay, P
    Wohlmuth, W
    Caneau, C
    Adesida, I
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (05) : 679 - 681
  • [4] A 12-GB/S HIGH-PERFORMANCE, HIGH-SENSITIVITY MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR LONG-WAVELENGTH TRANSMISSION-SYSTEMS
    LUNARDI, LM
    CHANDRASEKHAR, S
    GNAUCK, AH
    BURRUS, CA
    HAMM, RA
    SULHOFF, JW
    ZYSKIND, JL
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (02) : 182 - 184
  • [5] 20-GB/S MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR 1.55-MU-M APPLICATIONS
    LUNARDI, LM
    CHANDRASEKHAR, S
    GNAUCK, AH
    BURRUS, CA
    HAMM, RA
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (10) : 1201 - 1203
  • [6] INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS
    SOOLE, JBD
    SCHUMACHER, H
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 737 - 752