Low dielectric constant materials for interlayer dielectric

被引:84
作者
Treichel, H [1 ]
Ruhl, G
Ansmann, P
Wurl, R
Muller, C
Dietlmeier, M
机构
[1] Fraunhofer Inst Solid State Technol, IFT, Munich, Germany
[2] Tech Univ Munich, Munich, Germany
关键词
polymers; CVD; spin-on materials; low dielectric constant; intermetal dielectric; RC delay;
D O I
10.1016/S0167-9317(97)00185-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mu m one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications.
引用
收藏
页码:1 / 19
页数:19
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