ANALYSIS OF THE EFFECTS OF SCALING ON INTERCONNECT DELAY IN ULSI CIRCUITS

被引:41
作者
BOTHRA, S
ROGERS, B
KELLAM, M
OSBURN, CM
机构
[1] MCNC Center for Microelectronics, Research Triangle Park, NC, 27709-2889
关键词
D O I
10.1109/16.199365
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A model has been developed to assess interconnect delay in ULSI circuits as dimensions are scaled deep into the submicrometer regime. In addition to RC delay, the model includes the effects of current density limitations imposed to prevent electromigration of the interconnect metallurgy. We confirm that interconnect delays will contribute significantly to the total circuit delay in future ULSI circuits unless improvements are implemented. However, contrary to previous reports, we show that lowering the resistivity of the interconnect will not result in significant improvements in interconnect switching speed. Only by introducing lower dielectric constant interlevel insulators or by improving the electromigration resistance of the interconnect can significant performance enhancements be realized.
引用
收藏
页码:591 / 597
页数:7
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