An electron microscopy study of wear in polysilicon microelectromechanical systems in ambient air

被引:34
作者
Alsem, D. H.
Stach, E. A.
Dugger, M. T.
Enachescu, M.
Ritchie, R. O.
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[4] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[5] Sandia Natl Labs, Mat & Proc Sci Ctr, Albuquerque, NM 87185 USA
关键词
silicon; MEMS; wear; electron microscopy;
D O I
10.1016/j.tsf.2006.01.038
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
Wear is a critical factor in determining the durability of microelectromechanical systems (MEMS). While the reliability of polysilicon MEMS has received extensive attention, the mechanisms responsible for this failure mode at the microscale have yet to be conclusively determined. We have used on-chip polycrystalline silicon side-wall friction MEMS specimens to study active mechanisms during sliding wear in ambient air. Worn parts were examined by analytical scanning and transmission electron microscopy, while local temperature changes were monitored using advanced infrared microscopy. Observations show that small amorphous debris particles (similar to 50-100 nm) are removed by fracture through the silicon grains (similar to 500 nm) and are oxidized during this process. Agglomeration of such debris particles into larger clusters also occurs. Some of these debris particles/clusters create plowing tracks on the beam surface. A nano-crystalline surface layer (similar to 20-200 nm), with higher oxygen content, forms during wear at and below regions of the worn surface; its formation is likely aided by high local stresses. No evidence of dislocation plasticity or of extreme local temperature increases was found, ruling out the possibility of high temperature-assisted wear mechanisms. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:3259 / 3266
页数:8
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