The performance of CuIn1-xGaxSe2-based photovoltaic cells prepared from low-cost precursor films

被引：35

作者：

Bhattacharya, RN ^{[1
]}

Batchelor, W ^{[1
]}

Ramanathan, K ^{[1
]}

Contreras, MA ^{[1
]}

Moriarty, T ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 63卷 / 04期

关键词：

CuIn1-xGaxSe2; electrodeposition; electroless deposition; solar cells;

D O I：

10.1016/S0927-0248(00)00056-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper we report the 15.4%- and 13.4%-efficient CuIn1-xGaxSe2 (CIGS)-based devices from electrodeposited (ED) and electroless deposited (EL) precursors. The efficiency of the device prepared from electroless precursor film has been improved from 12.4% to 13.4%. The dependence of quantum efficiencies on reverse-bias voltage has been measured for a 15.4%-efficient ED device, 18.8%-efficient physical-vapor-deposited device, and 14.2%-efficient Cd-free device. The purpose of this work is to explore and improve the current collection mechanism. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：367 / 374

页数：8

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