Fabrication of porous metal oxide semiconductor films by a self-template method using layered hydroxide metal acetates

被引：18

作者：

Fujihara, S ^{[1
]}

Hosono, E ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2004年 / 31卷 / 1-3期

关键词：

oxide semiconductors; microstructure; chemical bath deposition; templates; films;

D O I：

10.1023/B:JSST.0000047980.69279.9b

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Porous metal oxide (Co3O4, NiO, or ZnO) films were fabricated by a self-template method using layered hydroxide metal acetates (LHMA; metal = Co, Ni, or Zn) as templates. LHMAs were initially grown on glass substrates through a chemical bath deposition in methanolic-aqueous solutions of metal acetates at 60degreesC. The template films had a unique, nest-like morphology consisting of interlaced flake-like particles as a result of two-dimensional crystal growth of LHMAs in supersaturated solutions. The templates were successfully converted into porous Co3O4, NiO, or ZnO films by heating at 500degreesC for 10 min in air without microstructural deformation.

引用

页码：165 / 168

页数：4