Photoresponse and electroluminescence of silicon-⟨porous silicon⟩-⟨chemically deposited metal⟩ structures

被引:14
作者
Belyakov, LV [1 ]
Goryachev, DN [1 ]
Sreseli, OM [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1134/1.1325434
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Photoelectric and electroluminescent properties of silicon-< porous silicon > structures with chemically deposited metal contacts were investigated. The large specific surface area of the contact and selective metal deposition only on the macrocrystalline elements of the structure provide better photoelectric performance of the photodiodes compared to the structures with evaporated contacts, especially in the short-wavelength spectral range. The obtained electroluminescence spectra are explained by metal-silicon barrier properties under forward bias and by double carrier injection into nanocrystallites under reverse bias. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码:1334 / 1337
页数:4
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