Thermal roughening of a thin film: A new type of roughening transition

被引：25

作者：

Maxson, JB ^{[1
]}

Savage, DE

Liu, F

Tromp, RM

Reuter, MC

Lagally, MG

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.85.2152

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The equilibrium thermal roughening of thin Ge layers (one and two monolayers) deposited on Si(001) has been investigated with low-energy electron microscopy. A Ge-coverage-dependent roughening is observed. For two monolayers, the temperature at which imaging contrast is lost due to surface roughness is 900 +/- 25 degrees C. between the roughening temperatures of Ge(001) and Si(001). Lower Ge coverages move this temperature closer to that of Si(001). The roughening is confined to the Ge overlayers. It is believed that this phenomenon represents a new type of surface roughening transition that should be generally applicable for heteroepitaxial films.

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页码：2152 / 2155

页数：4

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