Coherent phonon spectroscopy of GaP Schottky diode

被引：15

作者：

Chang, YM ^{[1
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10673, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.1560874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coherent longitudinal optical and acoustic phonons in GaP Schottky diode are impulsively generated and detected with time-resolved second-harmonic generation. A coherent longitudinal optical (LO) phonon is launched in the near-surface depletion region of GaP. The dephasing time of this coherent LO phonon is similar to10 ps and mainly due to the anharmonic decay into two zone-edge half-energy longitudinal acoustic (LA) phonons. Simultaneously, a coherent LA wave packet is created in the metal-semiconductor interface via transient thermal absorption in the metal thin layer. This acoustic wave packet propagates into the bulk with the sound velocity similar to5.8x10(5) cm/s of a GaP LA phonon. (C) 2003 American Institute of Physics.

引用

页码：1781 / 1783

页数：3

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