Interaction of electron and hole plasma with coherent longitudinal optical phonons in GaAs

被引:26
作者
Chang, YM [1 ]
机构
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10673, Taiwan
关键词
D O I
10.1063/1.1466535
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interaction of photoexcited electron-hole plasma with impulsively excited coherent longitudinal optical phonons in GaAs was investigated via time-resolved second-harmonic generation. The dephasing time of coherent LO phonons reduces significantly as photoexcited electron-hole plasma is injected into the near-surface depletion region. The coherent LO-electron and LO-hole coupling modes can both be clearly observed and investigated in real time. The rapid dephasing of the coherent LO-hole coupling mode is attributed to the strong polar phonon-carrier interaction and the overdamped nature of hole plasma. (C) 2002 American Institute of Physics.
引用
收藏
页码:2487 / 2489
页数:3
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