Observation of optically-active metastable defects in undoped GaN epilayers

被引：92

作者：

Xu, SJ ^{[1
]}

Chua, SJ

Wang, XC

Wang, W

机构：

[1] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 19期

关键词：

D O I：

10.1063/1.121379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. (C) 1998 American Institute of Physics. [S0003-6951(98)00219-8].

引用

页码：2451 / 2453

页数：3

共 26 条

[1] Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures [J].

Billeb, A ;

Grieshaber, W ;

Stocker, D ;

Schubert, EF ;

Karlicek, RF .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2790-2792

[2] Mechanisms of recombination in GaN photodetectors [J].

Binet, F ;

Duboz, JY ;

Rosencher, E ;

Scholz, F ;

Harle, V .

APPLIED PHYSICS LETTERS, 1996, 69 (09) :1202-1204

[3] Persistent photoconductivity in n-type GaN [J].

Chen, HM ;

Chen, YF ;

Lee, MC ;

Feng, MS .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :899-901

[4] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[5]

GOTZ W, 1994, APPL PHYS LETT, V65, P463, DOI 10.1063/1.112337

[6]

GOTZ W, 1995, APPL PHYS LETT, V66, P1340, DOI 10.1063/1.113235

[7] Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices [J].

Grieshaber, W ;

Schubert, EF ;

Goepfert, ID ;

Karlicek, RF ;

Schurman, MJ ;

Tran, C .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) :4615-4620

[8]

Hacke P, 1996, APPL PHYS LETT, V68, P1362, DOI 10.1063/1.116080

[9] Persistent photoconductivity in n-type GaN [J].

Hirsch, MT ;

Wolk, JA ;

Walukiewicz, W ;

Haller, EE .

APPLIED PHYSICS LETTERS, 1997, 71 (08) :1098-1100

[10] Properties of the yellow luminescence in undoped GaN epitaxial layers [J].

Hofmann, DM ;

Kovalev, D ;

Steude, G ;

Meyer, BK ;

Hoffmann, A ;

Eckey, L ;

Heitz, R ;

Detchprom, T ;

Amano, H ;

Akasaki, I .

PHYSICAL REVIEW B, 1995, 52 (23) :16702-16706

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