Bipolar resistive switching in polycrystalline TiO2 films

被引：193

作者：

Tsunoda, K. ^{[1
]}

Fukuzumi, Y.

Jameson, J. R.

Wang, Z.

Griffin, P. B.

Nishi, Y.

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[2] Toshiba Co Ltd, Ctr Semicond Res & Dev, Yokohama, Kanagawa 2358522, Japan

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期

关键词：

D O I：

10.1063/1.2712777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bipolar resistive switching was found in thin polycrystalline TiO2 films formed by the thermal oxidation of sputtered Ti films. With a Ag top electrode, TiO2 film, and Pt bottom electrode, bistable resistive switching with a low operating voltage and a good uniformity was observed repeatedly without an initial electrical "forming" process. This switching phenomenon might be described as the formation and rupture of a filamentary conductive path consisting of a chain of Ag atoms. The temperature dependence of the switching voltage is discussed in terms of interstitial ionic diffusion of Ag in the TiO2 matrix. (c) 2007 American Institute of Physics.

引用

页数：3

共 7 条

[1] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].