Electronic structure model for n- and p-type silicon quantum dots

被引：3

作者：

Fang, TN ^{[1
]}

Ruden, PP ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 04期

关键词：

quantum dots; silicon nanostructures;

D O I：

10.1006/spmi.1996.0454

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present effective mass, single-particle calculations of the electronic structure of nand p-type silicon quantum dots. The structures investigated approximate silicon quantum dots fabricated on [001]-oriented SIMOX wafers. The effects of possible built-in strain are investigated in the framework of deformation potential induced splitting of the six degenerate conduction band valleys and the splitting of the degeneracy at the top of the bulk valence band. We present the energy levels and their degeneracies as functions of the dimensions of simple tetragonal model quantum dots. Our results are relevant for silicon quantum dots that are sufficiently small such as to lead to a predominance of the confinement energy over the Coulomb energy. (C) 1997 Academic Press Limited.

引用

页码：589 / 596

页数：8

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