Photoluminescence measurements from the two polar faces of ZnO

被引：68

作者：

Sherriff, RE ^{[1
]}

Reynolds, DC

Look, DC

Jogai, B

Hoelscher, JE

Collins, TC

Cantwell, G

Harsch, WC

机构：

[1] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] Oklahoma State Univ, Stillwater, OK 74078 USA

[4] Eagle Picher Ind Inc, Miami, OK 74354 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 06期

关键词：

D O I：

10.1063/1.1288159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the "c" axis is not symmetric. As a result, a ZnO crystal surface that is normal to the c axis exposes one of two distinct polar faces, with (000 (1) over bar) being considered the O face and (0001) the Zn face. Photoluminescence (PL) measurements on the two faces reveal a striking difference. Two transitions are observed in PL that are dominant from the O face and barely observed in PL from the Zn face. These lines are identified as phonon replicas of a particular D-0,X transition using energy separations, excitation dependence, and time-resolved PL measurements. In addition, PL emission from free excitons is found to be more intense from the O face than from the Zn face. (C) 2000 American Institute of Physics. [S0021-8979(00)02018-1].

引用

页码：3454 / 3457

页数：4

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