Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon

被引:27
作者
Torchynska, TV
Gomez, JP
Polupan, GP
Espinoza, FGB
Borquez, AG
Korsunskaya, NE
Khomenkova, LY
机构
[1] Inst Politecn Nacl, Mexico City 07738, DF, Mexico
[2] Natl Acad Sci Ukraine, Inst Semicond, UA-28 Kiev, Ukraine
关键词
porous silicon; photoluminescence; etching;
D O I
10.1016/S0169-4332(00)00529-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoluminescence and photoluminescence excitation spectroscopies, scanning electron microscopy, and atomic force microscopy were used to study the photoluminescence mechanism in porous silicon. The dependences of photoluminescence parameters on electrochemical etching regimes, excitation light wavelength, and vacuum ageing have been investigated. We show that intensive and broad "red" luminescence band (similar to 600-800 nm) is non-elementary, and can be decomposed into three elementary bands. The mechanisms of the elementary bands are discussed. (C) 2000 Published by Elsevier Science B.V.
引用
收藏
页码:197 / 204
页数:8
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