共 17 条
[2]
DISMUKES JP, 1996, P ELECTROCHEM SOC, V9611, P110
[3]
DISMUKES P, 1972, J CRYST GROWTH, V13, P365
[4]
Properties of hexagonal ScN versus wurtzite GaN and InN
[J].
PHYSICAL REVIEW B,
2002, 66 (20)
:2012031-2012034
[5]
Microstructure and electronic properties of the refractory semiconductor ScN grown on Mg0(001) by ultra-high-vacuum reactive magnetron sputter deposition
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1998, 16 (04)
:2411-2417
[8]
Band-gap engineering in sputter-deposited ScxGa1-xN
[J].
APPLIED PHYSICS LETTERS,
2001, 78 (19)
:2891-2892
[9]
First principles total energy calculations of the structural and electronic properties of ScxGa1-xN
[J].
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
2003, 238 (01)
:127-135
[10]
Moustakas TD, 1996, ELEC SOC S, V96, P197