ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase

被引:81
作者
Constantin, C [1 ]
Al-Brithen, H [1 ]
Haider, MB [1 ]
Ingram, D [1 ]
Smith, AR [1 ]
机构
[1] Ohio Univ, Condensed Matter & Surface Sci Program, Dept Phys & Astron, Athens, OH 45701 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.193309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Alloy formation in ScGaN is explored using rf molecular beam epitaxy over the Sc fraction range x=0-100%. Optical and structural analysis show separate regimes of growth, namely (I) wurtzitelike but having local lattice distortions in the vicinity of the Sc-Ga substitutions for small x (xless than or equal to0.17), (II) a transitional regime for intermediate x, and (III) cubic, rocksaltlike for large x(xgreater than or equal to0.54). In regimes I and III, the direct optical transition decreases approximately linearly with increasing x but with an offset over region II. Importantly, it is found that for regime I, an anisotropic lattice expansion occurs with increasing x in which a increases much more than c. These observations support the prediction of Farrer and Bellaiche [Phys. Rev. B 66, 201203-1 (2002)] of a metastable layered hexagonal phase of ScN, denoted h-ScN.
引用
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页码:1 / 4
页数:4
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