Effect of stress induced defects on electrical properties of czochralski grown silicon

被引：32

作者：

Misiuk, A

Jung, W

Surma, B

Jun, J

Rozental, M

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] PAS, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

SOLID STATE PHENOMENA | 1997年 / 57-8卷

关键词：

Cz-Si; oxygen; thermal donors; hydrostatic pressure; annealing;

D O I：

10.4028/www.scientific.net/SSP.57-58.393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Czochralski grown silicon, Cz-Si, with interstitial oxygen concentration, O-i, in the range of (6.5 - 11) x 10(17) cm(-3) indicates stress - enhanced creation of thermal donors in effect of annealing at (670 - 1000)K for up to 20 hours under argon pressure up to above 1.6GPa. This effect depends on initial oxygen concentration and is related to preannealing conditions. The pressure - stimulated phenomena in annealed Ct-Si were explained tentatively in terms of pressure - induced O-i clustering with creation of oxygen - related defects exhibiting electrical activity.

引用

页码：393 / 398

页数：6

共 16 条

[1] DLTS study of oxygen precipitates in silicon annealed at high pressure [J].