The effect of pressure on the concentration of thermal donors in czochralski crown silicon

被引:21
作者
Misiuk, A
Jung, W
机构
[1] Institute of Electron Technology, PL-02-668 Warsaw
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1996年 / 198卷 / 01期
关键词
D O I
10.1002/pssb.2221980176
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have investigated the effect of annealing at temperatures up to 1230 K under hydrostatic argon pressure up to 1.1 GPa on thermal donor formation and on interstitial oxygen precipitation in Czochralski grown silicon. Depending on annealing temperature and applied pressure, the stress-enhanced formation of thermal donors, enhanced interstitial oxygen loss from the Si-O solid solution, and generation of oxygen-related defects were observed.
引用
收藏
页码:565 / 568
页数:4
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