Thin film poly-Si solar cells with film thickness of 10 microns fabricated by direct deposition using APCVD method

被引：3

作者：

Ishikawa, Y ^{[1
]}

Nishioka, K ^{[1
]}

Yamamoto, Y ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Med Sci, Nara 6300101, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190846

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin film poly-Si solar cell grown by atmospheric pressure chemical vapor deposition (APCVD) has been fabricated. In order to realize excellent crystallinity poly-Si thin films, two-step deposition method was carried out. The poly-Si film with very high preferential orientation to (220) was obtained with a film thickness of 10 pm and grain size of 3 mum. Due to high temperature annealing effect muc-Si phase which existed at grain boundaries was disappeared completely. For fabricated thin film poly-Si solar cells, electrical properties were evaluated. Relatively high Jsc of 16.74 mA/cm(2) was obtained. Factors to promote the properties further were discussed. Results obtained in this work suggest the possibility of realization of high performance thin film poly-Si solar cells.

引用

页码：1294 / 1297

页数：4

共 8 条

[1]

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