Recent advances in mid-infrared (3-6 μm) emitters

被引：29

作者：

Biefeld, RM ^{[1
]}

Allerman, AA ^{[1
]}

Kurtz, SR ^{[1
]}

机构：

[1] Sandia Natl Labs, Dept 1113, Albuquerque, NM 87185 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 51卷 / 1-3期

关键词：

InAsSb; mid-infrared laser; metal-organic chemical vapor deposition; infrared; light emitting diodes; antimonide materials;

D O I：

10.1016/S0921-5107(97)00218-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. We have made gain-guided, injection lasers using undoped, p-type AlAs0.16Sb0.84 for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP SLS active regions. The lasers and light emitting diodes (LED) utilize the semi-metal properties of a p-GaAsSb/nInAs heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb/InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8-3.9 mu m and a characteristic temperature of 29-40 K. We also present results for both optically pumped and injection lasers with InAsSb/InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7 mu m SLS laser was 240 K. An SLS LED emitted at 4.0 mu m with 80 mu W of power at 300 K. (C) 1998 Published by Elsevier Science S.A. All rights reserved.

引用

页码：1 / 8

页数：8

共 25 条

[1] InAsSb-based mid-infrared lasers (3.8-3.9 mu m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition [J].

Allerman, AA ;

Biefeld, RM ;

Kurtz, SR .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :465-467

[2]

Biefeld RM, 1996, APPL PHYS LETT, V68, P932, DOI 10.1063/1.116235

[3] THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BIEFELD, RM .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :255-263

[4] THE GROWTH OF INAS1-XSBX INAS STRAINED-LAYER SUPERLATTICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

BIEFELD, RM ;

BAUCOM, KC ;

KURTZ, SR .

JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) :231-234

[5] INASSB/INALASSB STRAINED-QUANTUM-WELL DIODE-LASERS EMITTING AT 3.9 MU-M [J].

CHOI, HK ;

TURNER, GW .

APPLIED PHYSICS LETTERS, 1995, 67 (03) :332-334

[6] 175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m [J].

Choi, HK ;

Turner, GW ;

Manfra, MJ ;

Connors, MK .

APPLIED PHYSICS LETTERS, 1996, 68 (21) :2936-2938

[7]

CHOI HK, 1995, I PHYS C SER, V144, P1

[8] Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices [J].

Chow, DH ;

Miles, RH ;

Hasenberg, TC ;

Kost, AR ;

Zhang, YH ;

Dunlap, HL ;

West, L .

APPLIED PHYSICS LETTERS, 1995, 67 (25) :3700-3702

[9] High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature [J].

Faist, J ;

Capasso, F ;

Sirtori, C ;

Sivco, DL ;

Baillargeon, JN ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3680-3682

[10]

FELIX CL, 1997, PHOTON TECH LETT, V9, P734

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