Anomalous shift of the 1075cm-1 oxygen-hydrogen defect in silicon

被引:15
作者
Hourahine, B [1 ]
Jones, R
Oberg, S
Briddon, PR
机构
[1] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England
[2] Univ Lulea, Dept Math, S-97187 Lulea, Sweden
[3] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词
ab initio theory; oxygen; hydrogen molecule; water molecule; Si;
D O I
10.4028/www.scientific.net/MSF.258-263.277
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First principles calculations are carried out on i) hydrogen and ii) water molecules trapped near an interstitial oxygen atom in Si. We find that it is possible for these molecules to cause an upward shift in the antisymmetric stretch mode of O-i when H is replaced by D, which could explain the anomalous shift in the 1075 cm(-1) O-H related local vibrational mode. Both these molecules lead to modes in the 3500-4000 cm(-1) region but those of the H-2 lie close to those recently detected using Fourier transform infra-red spectroscopy.
引用
收藏
页码:277 / 282
页数:6
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