Doping effects on the electronic and structural properties of CoO2:: An LSDA+U study -: art. no. 085108

被引:84
作者
Zhang, PH [1 ]
Luo, WD
Crespi, VH
Cohen, ML
Louie, SG
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[4] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.085108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A systematic local spin density approximation (LSDA)+U study of doping effects on the electronic and structural properties of single layer CoO2 is presented. Undoped CoO2 is a charge transfer insulator within LSDA+U and a metal with a high density of states (DOS) at the Fermi level within LSDA. (CoO2)(1.0-), on the other hand, is a band insulator with a gap of 2.2 eV. Systems with fractional doping are metals if no charge orderings are present. Due to the strong interaction between the doped electron and other correlated Co d electrons, the calculated electronic structure of (CoO2)(x-) depends sensitively on the doping level x. Zone center optical phonon energies are calculated under the frozen phonon approximation and are in good agreement with measured values. Softening of the E-g phonon at doping xsimilar to0.25 seems to indicate a strong electron-phonon coupling in this system. Possible intermediate spin states of Co ions, Na ordering, as well as magnetic and charge orderings in this system are also discussed.
引用
收藏
页码:085108 / 1
页数:13
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