Metallic impurity gettering in MeV implanted Si

The interaction of iron and copper with MeV implantation damage in Ct and epitaxial silicon has been investigated by means of secondary ion mass spectroscopy, optical microscopy/preferential chemical etching, and transmission electron microscopy. We found that oxygen, as well as the metallic impurities, are gettered at two well defined regions, corresponding to interstitial and vacancy-type defects at the projected range R-p and R-p/2, respectively. The amount of metallic impurity trapped at R-p/2 is determined by competition with trapped oxygen, and the thermal stability of the vacancy related defects. Gettering of iron in both regions exhibits a relaxation type behavior and is limited by diffusion from the bulk.