Gettering of Fe to below 10(10) cm(-3) in MeV self-implanted Czochralski and float zone silicon

被引：25

作者：

Kononchuk, O ^{[1
]}

Brown, RA ^{[1
]}

Radzimski, Z ^{[1
]}

Rozgonyi, GA ^{[1
]}

Gonzalez, F ^{[1
]}

机构：

[1] MICRON TECHNOL INC,BOISE,ID 83707

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 27期

关键词：

D O I：

10.1063/1.116986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Si ion fluence and oxygen concentration on secondary defect formation and gettering of metallic impurities in MeV self-implanted silicon have been studied for Czochralski (Ct) and float zone (FZ) silicon by means of deep level transient spectroscopy, secondary ion mass spectroscopy, transmission electron microscopy, and optical microscopy/chemical etching. We found that the density, depth distribution, and number of extended defects is strongly dependent upon both the Si ion fluence and the oxygen concentration. Effective gettering of iron to below 10(10) cm(-3) can be achieved in both FZ and Cz wafers at implantation doses of 10(15) cm(-2). (C) 1996 American Institute of Physics.

引用

页码：4203 / 4205

页数：3

共 11 条

[1] FUNDAMENTAL PROPERTIES OF INTRINSIC GETTERING OF IRON IN A SILICON-WAFER [J].