MINORITY-CARRIER LIFETIME AND BACKSCATTERING MEASUREMENTS OF ION-GETTERED SILICON

被引：7

作者：

RYSSEL, H

KRANZ, H

BAYERL, P

SCHMIEDT, B

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209242

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：125 / 132

页数：8

共 13 条

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[4]

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DRUM, CM .

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[7]

MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161

[8] A STUDY OF GETTERING EFFECT OF METALLIC IMPURITIES IN SILICON [J].

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[9] GENERATION LIFETIME INVESTIGATION OF ION-DAMAGE GETTERED SILICON USING MOS STRUCTURE [J].

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PERKINS, KD .

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[10] REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON [J].

OPPOLZER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02) :K91-&

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