REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：14

作者：

OPPOLZER, H ^{[1
]}

机构：

[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 02期

关键词：

D O I：

10.1002/pssa.2210420247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / &

共 11 条

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[2]

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[6] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

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[8] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS [J].

ROZGONYI, GA ;

KUSHNER, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :570-576

[9] SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS [J].

ROZGONYI, GA ;

MAHAJAN, S ;

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BRASEN, D .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :531-533

[10] INFLUENCE OF STACKING FAULTS ON LEAKAGE CURRENTS OF FET DEVICES [J].

SCHWUTTKE, GH ;

BRACK, K ;

HEARN, EW .

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