INFLUENCE OF STACKING FAULTS ON LEAKAGE CURRENTS OF FET DEVICES

被引:18
作者
SCHWUTTKE, GH
BRACK, K
HEARN, EW
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D O I
10.1016/0026-2714(71)90105-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:467 / +
页数:1
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共 7 条
[1]   CHARGE COUPLED SEMICONDUCTOR DEVICES [J].
BOYLE, WS ;
SMITH, GE .
BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04) :587-+
[2]  
Grove A., 1967, PHYS TECHNOL S, P311
[3]   STACKING FAULTS IN ANNEALED SILICON SURFACES [J].
LAWRENCE, JE .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :360-&
[4]   GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J].
QUEISSER, HJ ;
VANLOON, PGG .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :3066-&
[5]   OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].
SANDERS, IR ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&
[6]   SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY [J].
SCHWUTTK.GH .
MICROELECTRONICS RELIABILITY, 1970, 9 (05) :397-&
[7]   Feedback-Controlled X-Ray Diffraction Topography [J].
van Mellaert, L. J. ;
Schwuttke, G. H. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03) :687-696