GENERATION LIFETIME INVESTIGATION OF ION-DAMAGE GETTERED SILICON USING MOS STRUCTURE

被引：29

作者：

NASSIBIAN, AG ^{[1
]}

BROWNE, VA ^{[1
]}

PERKINS, KD ^{[1
]}

机构：

[1] PLESSY CO LTD, ALLEN CLARK RES CTR, TOWCESTER, NORTHAMPTONSHIR, ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.322692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：992 / 996

页数：5

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