BULK AND OPTICAL GENERATION PARAMETERS MEASURED WITH PULSED MOS CAPACITOR

[1] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09): : 1827 - +

[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[3] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[4] NARROW BASE GERMANIUM PHOTODIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1122 - 1130

[5] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1285 - +

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P430

[7] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

[1] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09): : 1827 - +

[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[3] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[4] NARROW BASE GERMANIUM PHOTODIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1122 - 1130

[5] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1285 - +

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P430

[7] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30