Study of the dislocation structure involved in a nanoindentation test by atomic force microscopy and controlled chemical etching

被引:56
作者
Gaillard, Y [1 ]
Tromas, C [1 ]
Woirgard, J [1 ]
机构
[1] Univ Poitiers, UFR Sci, Met Phys Lab, F-86962 Futuroscope, France
关键词
nanoindentation; atomic force microscopy; chemical etching; dislocation structure; plastic deformation;
D O I
10.1016/S1359-6454(02)00509-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, it is shown that combining AFM, chemical etching and controlled polishing, progressively removing thin layers of material, allows a three-dimensional reconstruction of the volume distribution of dislocations about and under nanoindentation imprints. To illustrate the method, results obtained in MgO, a material known for its simple plasticity, have been selected. It is shown, comparing surface deformation and etching pattern, that the entire dislocation distribution associated with small indents can be analysed in terms of individual dislocations, leading to a better understanding of the elementary mechanisms of plasticity associated with the early stages of indents formation in crystalline material. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1059 / 1065
页数:7
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