Amorphous carbon coated silicon nanotips fabricated by MPCVD using anodic aluminum oxide as the template

被引:21
作者
Chen, Te-Ming [1 ]
Pan, Fu-Ming
Hung, Jui-Yi
Chang, L.
Wu, Shich-Chuan
Chen, Chia-Fu
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan
[2] Natl Nano Device Labs, Hsinchu 30078, Taiwan
关键词
D O I
10.1149/1.2436629
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We have used nanoporous anodic aluminum oxide (AAO) as a template to fabricate amorphous carbon (alpha-C) coated silicon nanotips by microwave plasma chemical vapor deposition (MPCVD). During the preparation of the well-ordered AAO pore channel array, an underlying TiN layer was anodically oxidized as well in the late stage of the AAO anodization, forming titanium oxide nanomasks for Si nanotip fabrication. The titanium oxide nanomasks were then used to transfer the arrangement pattern of the AAO pore channel array to the Si substrate by plasma etch in the MPCVD system and, therefore, a well-ordered Si nanotip array was produced. An alpha-C layer similar to 5 nm thick was in situ deposited on the Si nanotips during the MPCVD process. The alpha-C layer was rich in nanocrystalline graphitic carbons according to Raman and Auger electron spectroscopies. The nanocrystalline graphitic carbons in the coating and the sharp tip shape made the Si nanotip a good field emitter and a field enhancement factor of similar to 659 was obtained. (c) 2007 The Electrochemical Society.
引用
收藏
页码:D215 / D219
页数:5
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