Nucleation of hydrogen-induced platelets in silicon

被引：69

作者：

Nickel, NH

Anderson, GB

Johnson, NM

Walker, J

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.62.8012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogen-induced platelet generation in single-crystal silicon was investigated as a function of the Fermi energy. Platelet formation is observed only for Fermi-level positions of E-C-E-F less than or equal to 0.3 eV. With decreasing E-C-E-F the platelet density increases monotonically to 2.45 X 10(17) cm(-3). Experiments performed on electrically compensated silicon demonstrate that the formation of hydrogen-induced platelets is solely controlled by the Fermi energy.

引用

页码：8012 / 8015

页数：4

共 13 条

[1] DIATOMIC-HYDROGEN-COMPLEX DIFFUSION AND SELF-TRAPPING IN CRYSTALLINE SILICON [J].