Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane

3C-SiC films have been grown by MBE on Si(100) and Si(111) from the organosilane precursor silacyclobutane at temperatures of 800 to 1000 degrees C and pressures of 1 to 5 x 10(-6) Torr. The chemical composition of the grown films provided by SIMS indicates a Si to C atomic ratio of about 1. The chemical structure of SiC was confirmed by FTIR. The surface morphology and crystallinity of SiC films were studied by SEM and RHEED. X-ray diffraction reveals that SIC films grown on Si(111) with the presence of native oxide exhibit better crystallinity than those grown on Si(111) surfaces from which thr: oxide is removed in-situ prior to growth.