Characterization of silicon wafer bonding for power MEMS applications

被引：27

作者：

Ayón, AA

Zhang, X ^{[1
]}

Turner, KT

Choi, DW

Miller, B

Nagle, SF

Spearing, SM

机构：

[1] Boston Univ, Dept Mfg Engn, Boston, MA 02215 USA

[2] Sony Semicond, San Antonio, TX 78245 USA

[3] Boston Univ, Fraunhofer USA Ctr Mfg Innovat, Boston, MA 02215 USA

[4] MIT, Gas Turbine Lab, Cambridge, MA 02139 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 103卷 / 1-2期

关键词：

low temperature; wafer bonding; power MEMS;

D O I：

10.1016/S0924-4247(02)00329-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 degreesC was characterized. The silicon-silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending-delamination technique. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 8

页数：8

共 18 条

[1] GROWTH, SHRINKAGE, AND STABILITY OF INTERFACIAL OXIDE LAYERS BETWEEN DIRECTLY BONDED SILICON-WAFERS [J].