Thermoanalysis and XRD study of crystallization behaviors of amorphous carbon nitride

被引：12

作者：

Xiao, XC ^{[1
]}

Jiang, WH ^{[1
]}

Song, LX ^{[1
]}

Tian, JF ^{[1
]}

Hu, XF ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

基金：

中国国家自然科学基金;

关键词：

carbon nitride; thermoanalysis; X-ray diffraction; crystallization;

D O I：

10.1016/S0925-9635(00)00322-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous carbon nitride films and powders were prepared by DC reactive magnetron sputtering, then heat-treatment was carried out under protective nitrogen atmosphere at the temperature determined by DTA (Differential Thermal Analysis). The results of TG (Thermogravimetry) analysis indicated that the heat-treatment caused the maximum loss of nitrogen in carbon nitride at 620 degrees C. X-Ray diffraction (XRD) analysis proved that heat-treatment over 1100 degrees C could induce the partial transition from the amorphous state to the crystalline state of carbon nitride and obvious alpha-C3N4 diffraction peaks appeared in the XRD spectrum of heat-treated samples at approximately 1180 and 1440 degrees C. The effect of substrate Si on the crystallization behaviors of amorphous CNx films is also discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1782 / 1785

页数：4

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