Charge state control and relaxation in an atomically doped silicon device

被引：48

作者：

Andresen, Seren E. S. ^{[1
]}

Brenner, Rolf

Wellard, Cameron J.

Yang, Changyi

Hopf, Toby

Escott, Christopher C.

Clark, Robert G.

Dzurak, Andrew S.

Jamieson, David N.

Hollenberg, Lloyd C. L.

机构：

[1] Univ New S Wales, Australian Res Council Ctr Excellence Quantum Com, Sydney, NSW 2052, Australia

[2] Univ Melbourne, Australian Res Council Ctr Excellence Quantum Com, Melbourne, Vic 3010, Australia

来源：

NANO LETTERS | 2007年 / 7卷 / 07期

关键词：

D O I：

10.1021/nl070797t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate time-resolved control and detection of single-electron transfers in a silicon device implanted with exactly two phosphorus donors. Charge state relaxation at millikelvin temperature is shown to be dominated by phonon emission and background charge fluctuations for low energies, while higher-order processes take over at higher energies. Our results reveal relaxation times for single-donor charge states of several milliseconds, which have significant implications for single-atom nanoelectronics.

引用

收藏

页码：2000 / 2003

页数：4

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