All-silicon optoelectronic modulator with 1 GHz switching capability

被引：29

作者：

Irace, A

Breglio, G

Cutolo, A

机构：

[1] Univ Naples Federico II, Dept Elect & Telecommun Engn, I-80125 Naples, Italy

[2] Univ Sannio, Benevento, Italy

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 02期

关键词：

D O I：

10.1049/el:20030136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a pin diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.

引用

页码：232 / 233

页数：2

共 6 条

[1] Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror [J].