Role of semicore d electrons in quasiparticle band-structure calculations

被引:106
作者
Rohlfing, M [1 ]
Kruger, P [1 ]
Pollmann, J [1 ]
机构
[1] Univ Munster, Inst Theoret Phys Festkorperphys 2, D-48149 Munster, Germany
关键词
D O I
10.1103/PhysRevB.57.6485
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the role of semicore d electrons in the calculation of quasiparticle band structures within the GW approximation for a number of elemental and compound semiconductors, as well as for a semimetal. The systems studied comprise Ge, GaN, ZnS, CdS, and alpha-Sn. Semicore d states are explicitly taken into account as valence states in our investigations. Overall, they have a strong influence on the band structure of the compounds, but not on that of the elemental semiconductor Cie or of the semimetal alpha-Sn. Nevertheless, there is a distinct influence on the Ge band structure to be noted, as well, in that the gap changes from direct to indirect by the inclusion of the semicore d states. Our band-structure results are in very gratifying agreement with available experimental data.
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收藏
页码:6485 / 6492
页数:8
相关论文
共 49 条
[1]   3d semicore states in ZnSe, GaAs, and Ge [J].
Aryasetiawan, F ;
Gunnarsson, O .
PHYSICAL REVIEW B, 1996, 54 (24) :17564-17567
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]   ELECTRONIC-STRUCTURE OF A-SN AND ITS DEPENDENCE ON HYDROSTATIC STRAIN [J].
BRUDEVOLL, T ;
CITRIN, DS ;
CARDONA, M ;
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1993, 48 (12) :8629-8635
[4]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[5]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[6]   Electronic structure of cubic gallium nitride films grown on GaAs [J].
Ding, SA ;
Neuhold, G ;
Weaver, JH ;
Haberle, P ;
Horn, K ;
Brandt, O ;
Yang, H ;
Ploog, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :819-824
[7]   CALCULATIONS OF THE STRUCTURAL-PROPERTIES OF CUBIC ZINC-SULFIDE [J].
ENGEL, GE ;
NEEDS, RJ .
PHYSICAL REVIEW B, 1990, 41 (11) :7876-7878
[8]   ELECTRONIC AND STRUCTURAL-PROPERTIES OF GAN BY THE FULL-POTENTIAL LINEAR MUFFIN-TIN ORBITALS METHOD - THE ROLE OF THE D-ELECTRONS [J].
FIORENTINI, V ;
METHFESSEL, M ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1993, 47 (20) :13353-13362
[9]   SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW B, 1988, 37 (17) :10159-10175
[10]  
GOLDMANN A, 1989, LANDOLTBORNSTEIN A, V23