Electronic structure of cubic gallium nitride films grown on GaAs

被引:51
作者
Ding, SA
Neuhold, G
Weaver, JH
Haberle, P
Horn, K
Brandt, O
Yang, H
Ploog, K
机构
[1] MAX PLANCK GESELL, FRITZ HABER INST, D-14195 BERLIN, GERMANY
[2] PAUL DRUDE INST FESTKORPERELEKT, D-10117 BERLIN, GERMANY
[3] UNIV MINNESOTA, DEPT CHEM ENGN & MAT SCI, MINNEAPOLIS, MN 55455 USA
[4] UNIV TECN FEDERICO SANTA MARIA, DEPT FIS, VALPARAISO, IN USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期
关键词
D O I
10.1116/1.580396
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The composition, surface structure, and electronic structure of zinc blende-GaN films grown on GaAs (100) and (110) by plasma-assisted molecular beam epitaxy were investigated by means of core and valence level photoemission. Angle-resolved photoelectron spectra (photon energy 30-110 eV) exhibited emission from the Ga 3d and N 2s levels, as well as a clear peak structure in the valence band region. These peaks were found to shift with photon energy, indicative of direct transitions between occupied and unoccupied GaN bands. By using a free electron final band, we are able to derive the course of the bands along the Gamma-X and Gamma-K-X directions of the Brillouin zone and to determine the energy of critical points at the X point. The relative energies of the Ga 3d and nitrogen 2s bands were also studied, and a small amount of dispersion was detected in the latter. The resulting band structure is discussed in relation to existing band structure calculations. (C) 1996 American Vacuum Society.
引用
收藏
页码:819 / 824
页数:6
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