MOLECULAR-BEAM-EPITAXY GROWTH OF GAN ON GAAS(100) BY USING REACTIVE NITROGEN-SOURCE

被引：46

作者：

HE, ZQ ^{[1
]}

DING, XM ^{[1
]}

HOU, XY ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV,FUDAN TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 10(17) cm-3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.

引用

页码：315 / 317

页数：3

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