ADSORPTION OF ATOMIC NITROGEN AT GAAS(110) SURFACES

被引:15
作者
BERGER, A [1 ]
TROOST, D [1 ]
MONCH, W [1 ]
机构
[1] UNIV DUISBURG GESAMTHSCH,SONDERFORSCH BEREICH 254,W-4100 DUISBURG,GERMANY
关键词
D O I
10.1016/S0042-207X(05)80157-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interaction of nitrogen atoms with cleaved GaAs(110) surfaces was studied at room temperature by using Auger electron, low-energy electron energy-loss, and uv photoemission spectroscopy (AES, LEELS, UPS) as well as a Kelvin probe. For reasons of comparison AES and EELS were also applied to a GaN(0001) sample. At low exposures a chemisorption of the nitrogen atoms at the GaAs(110) surface was observed. For larger exposures, the experimental results obtained are indicating the formation of a GaN surface layer via an anion exchange. © 1990 Pergamon Press plc.
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页码:669 / 671
页数:3
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